Paper
17 April 2000 4-mW microcavity LED at 650 nm on germanium substrates
Mark D'Hondt, Prasanta Modak, Danae Delbeke, Ingrid Moerman, Peter Van Daele, Roel G. Baets, Piet M. A. Demeester, Paul Mijlemans
Author Affiliations +
Abstract
We report on the realization of red micro cavity LED's on germanium substrates, offering a significant cost advantage compared to GaAs wafers. The MCLED structure, grown by LP- MOVPE, consists of 3 GaInP quantum wells within a (detuned) 1- (lambda) AlGaInP cavity, enclosed by Al95GaAs/Al55GaAs DBR's, with a current spreading layer on top. MCLED's with a 200 micrometer aperture, exhibit a quantum efficiency up to 4.35% (at 10 mA) and an optical power higher than 4 mW (at 80 mA), without any packaging. The optical spectrum was centered at 650 nm, with a FWHM of plus or minus 13 nm. Because of the detuning the opening angle of these structures was as much as 120 degrees. Rudimentary packaging resulted in a luminous intensity of 2.5 cd at 30 mA, with an opening angle of plus or minus 13 degrees. Initially the electrical performance was not optimal, but additional tests and a new processing have indicated that forward biases as low as 2.0 V (at 20 mA) can be obtained for LED's on Ge-substrates. The new processing further resulted in an improved optical output with 5 mW at 80 mA. We feel there is room for further improvement, but already we have demonstrated the feasibility of germanium substrates for commercial red (to orange/yellow) LED applications.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark D'Hondt, Prasanta Modak, Danae Delbeke, Ingrid Moerman, Peter Van Daele, Roel G. Baets, Piet M. A. Demeester, and Paul Mijlemans "4-mW microcavity LED at 650 nm on germanium substrates", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382838
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Cited by 3 scholarly publications.
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KEYWORDS
Light emitting diodes

Germanium

Semiconducting wafers

Gallium arsenide

Interfaces

Quantum wells

Calibration

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