Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors

Michael D. Bremser; Markus Luenenbuerger; Harry Protzmann; Michael Heuken

doi:10.1117/12.382818

17 April 2000 Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors

Michael D. Bremser, Markus Luenenbuerger, Harry Protzmann, Michael Heuken

Author Affiliations +

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382818
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor^R MOVPE system, a large scale production tool for GaN-based devices, and in the single wafer AIX 200 RF system. In situ monitoring was used to investigate nucleation behavior, temperature dependence of GaN growth, and the deposition of GaN/InGaN multiquantum wells, especially the quality of interfaces. The obtained results were compared with RT photoluminescence, and high resolution X-ray measurements. The optimized SQW and MQW structures were embedded in Si and Mg doped cladding layers. Contacting the layers with simple metal electrodes without any contact processing results in an intense green electroluminescence. Electroluminescence test structures emitting at 540 nm show minimum forward voltages around 4V with a current of 20 mA. Since no contact technology is applied this is a proof of high p-type doping and excellent structural properties of the InGaN. We found a standard deviation of the wavelength at about 533 nm of less than 1% across the wafer. Since these results were reproducibly obtained for structures emitting in the blue or green the basic demands of a reliable production equipment are fulfilled: (1) high precursor yield (typical 20% for the Ga source) (2) uniformity of electrical and optical performance (3) demonstration of electroluminescence with high efficiency.

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Michael D. Bremser, Markus Luenenbuerger, Harry Protzmann, and Michael Heuken "Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382818

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KEYWORDS

Semiconducting wafers

Gallium nitride

Interfaces

Electroluminescence

Indium gallium nitride

Quantum wells

Etching

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