Modeling semiconductor lasers: simulation of devices based on microscopic physics

Jerome V. Moloney; Miroslav Kolesik; Marcelo Matus; Keith J. Kasunic

doi:10.1117/12.391432

14 July 2000 Modeling semiconductor lasers: simulation of devices based on microscopic physics

Jerome V. Moloney, Miroslav Kolesik, Marcelo Matus, Keith J. Kasunic

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391432
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

Citation Download Citation

Jerome V. Moloney, Miroslav Kolesik, Marcelo Matus, and Keith J. Kasunic "Modeling semiconductor lasers: simulation of devices based on microscopic physics", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391432

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