Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

Matthew Erdtmann; J. Jiang; Anthony W. Matlis; Abbes Tahraoui; Christopher Louis Jelen; Manijeh Razeghi; Gail J. Brown

doi:10.1117/12.382123

13 April 2000 Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

Matthew Erdtmann, J. Jiang, Anthony W. Matlis, Abbes Tahraoui, Christopher Louis Jelen, Manijeh Razeghi, Gail J. Brown

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382123
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Multi-quantum well structures of Ga_xIn_1-xAs_yP_1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga_0.47In_0.53As/InP, Ga_0.38In_0.62As_0.80P_0.20 (1.55 micrometers )/InP, and Ga_0.27In_0.73As_0.57P_0.43 (1.3 micrometers )/InP quantum wells are found to have cutoff wavelengths of 9.3 micrometers , 10.7 micrometers , and 14.2 micrometers respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

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Matthew Erdtmann, J. Jiang, Anthony W. Matlis, Abbes Tahraoui, Christopher Louis Jelen, Manijeh Razeghi, and Gail J. Brown "Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382123

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