Charge collection and capacitance in continuous-film flat-panel detectors

Marcelo Mulato; Francesco Lemmi; Rachel Lau; Jeng-Ping Lu; Jackson Ho; Steve E. Ready; Jeffrey T. Rahn; Robert A. Street

doi:10.1117/12.384501

25 April 2000 Charge collection and capacitance in continuous-film flat-panel detectors

Marcelo Mulato, Francesco Lemmi, Rachel Lau, Jeng-Ping Lu, Jackson Ho, Steve E. Ready, Jeffrey T. Rahn, Robert A. Street

Author Affiliations +

Proceedings Volume 3977, Medical Imaging 2000: Physics of Medical Imaging; (2000) https://doi.org/10.1117/12.384501
Event: Medical Imaging 2000, 2000, San Diego, CA, United States

Abstract

The performance of the new generation of high fill factor two- dimensional imagers with high spatial resolution and low data line capacitance is described. These arrays have a continuous a-Si:H sensor layer deposited over the whole imager to improve sensitivity. We have studied charge collection and lateral leakage in the gap region in between two neighboring pixels. Experiments demonstrate that a 10 micrometer gap between pixels leads to an effective fill factor of approximately 92% and can be fabricated in a way to reduce the charge leakage between pixels to a very low level. We have also studied the capacitance of the data lines that can lead to increased electronic noise, degrading the imager performance. Experimental determination of the actual capacitance for different insulator materials are compared with numerical simulations, to identify the optimum structure. Based on these results, the new imager generation could be manufactured with a total parasitic capacitance of about 6 fF/pixel. Finally, we report measurements of the high fill factor imager under light and X-ray exposures.

Citation Download Citation

Marcelo Mulato, Francesco Lemmi, Rachel Lau, Jeng-Ping Lu, Jackson Ho, Steve E. Ready, Jeffrey T. Rahn, and Robert A. Street "Charge collection and capacitance in continuous-film flat-panel detectors", Proc. SPIE 3977, Medical Imaging 2000: Physics of Medical Imaging, (25 April 2000); https://doi.org/10.1117/12.384501

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