Paper
21 July 2000 Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts
Guido Schriever, Manfred Rahe, Willi Neff, Klaus Bergmann, Rainer Lebert, Hans Lauth, Dirk Basting
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Abstract
Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiation power of about 40 W to fulfill the prerequisites for an economical wafer throughput up to 80 wafer/hour with a wafer size of 300 mm in diameter. Laser produced plasmas and gas discharge based plasmas are under investigation by several working groups as EUV-sources for this purpose. In this paper the achieved results for the different sources are discussed regarding their emission characteristics in comparison to the demands of EUV lithography (EUVL).
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guido Schriever, Manfred Rahe, Willi Neff, Klaus Bergmann, Rainer Lebert, Hans Lauth, and Dirk Basting "Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390051
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Cited by 11 scholarly publications.
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KEYWORDS
Plasmas

Electrodes

Extreme ultraviolet

Extreme ultraviolet lithography

Capillaries

Lithography

Semiconducting wafers

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