1999 ITRS metrology roadmap and its implications for lithography

Alain C. Diebold; David C. Joy

doi:10.1117/12.386443

2 June 2000 1999 ITRS metrology roadmap and its implications for lithography

Alain C. Diebold, David C. Joy

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386443
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The 1999 International Technology Roadmap for Semiconductors describes the critical measurement challenges for all areas of wafer processing in the Metrology Roadmap. The roadmap indicates that the research and development community must advance microscopy, especially scanning electron microscopy, in the near term and simultaneously develop alternate technology for IC generations with sub 100 nm feature sizes. In this paper, the issues such as loss of depth of focus that are facing CD-SEM are described. In addition, some of key challenges for overlay are briefly mentioned.

Citation Download Citation

Alain C. Diebold and David C. Joy "1999 ITRS metrology roadmap and its implications for lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386443

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