New process monitor for reticles and wafers: the MEEF meter

Franklin M. Schellenberg; Pat LaCour; Olivier Toublan; Geoffrey T. Anderson; Raymond Yip

doi:10.1117/12.386471

2 June 2000 New process monitor for reticles and wafers: the MEEF meter

Franklin M. Schellenberg, Pat LaCour, Olivier Toublan, Geoffrey T. Anderson, Raymond Yip

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386471
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In this paper, we present experimental results with a prototype design of a 'MEEF Meter,' and investigate its sensitivity to defocus and exposure changes. We find that the results of the MEEF meter complement the results obtained through conventional CD metrology, with conventional CDs being a good indicator of exposure changes, while the MEEF meter is a good indicator of defocus changes. We also investigate two kinds of MEEF meter, a dense MEEF meter and 'Process' MEEF meter design, and find the results for MEEF similar, but that the 'Process' MEEF meter design is far more susceptible to noise and bridging.

Citation Download Citation

Franklin M. Schellenberg, Pat LaCour, Olivier Toublan, Geoffrey T. Anderson, and Raymond Yip "New process monitor for reticles and wafers: the MEEF meter", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386471

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