Paper
23 June 2000 Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists
Pushkara Rao Varanasi, Kathleen M. Cornett, Margaret C. Lawson
Author Affiliations +
Abstract
In our attempts to develop etch resistance 248 nm positive resists, we have designed and synthesized thermally stable and acid sensitive methylbenzyl ether (MBE) protected poly(hydroxystyrene) derivatives. Results presented in this paper clearly illustrate that the MBE protecting group provides superior etch resistance to conventional carbonate, ester and acetal/ketal based protecting groups. It is also shown that the MBE protecting group is thermally stable and undergoes acid catalyzed deprotection leading to preferential rearrangement products due to electrophilic ring substitution. Such a rearrangement is shown to provide a unique mechanism to reduce/eliminate resist shrinkage and improve lithographic performance.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pushkara Rao Varanasi, Kathleen M. Cornett, and Margaret C. Lawson "Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388316
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Lithography

Polymers

Resistance

Chemistry

Reactive ion etching

Glasses

Back to Top