Pattern collapse in high-aspect-ratio DUV and 193-nm resists

Wolf-Dieter Domke; Victoria L. Graffenberg; Shashikant Patel; Georgia K. Rich; Heidi B. Cao; Paul F. Nealey

doi:10.1117/12.388293

23 June 2000 Pattern collapse in high-aspect-ratio DUV and 193-nm resists

Wolf-Dieter Domke, Victoria L. Graffenberg, Shashikant Patel, Georgia K. Rich, Heidi B. Cao, Paul F. Nealey

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388293
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The pattern collapse behavior of a set of 193 nm resists in high aspect ratios was quantified. For all the resists investigated a general behavior could be observed: the collapse did not only depend on aspect ratio but also on pitch. With higher aspect ratio/pitch (normalized aspect ratio: NAR) all the resists go in a sigmoidal step from no collapse to total collapse. Surfactants in the developer did not have a consistent effect on pattern collapse. Resists of different polymer structure showed a very different tendency to collapse: acrylic resists collapse earlier than cyclo- olefinic resists. It could be deduced that pattern collapse will be a significant problem starting at the 130 nm node, if the film thickness range of the SIA roadmap are maintained. Comparison with data obtained for DUV resists showed that pattern collapse might limit the application of DUV resists in NGL. The modeling work at the University of Wisconsin shows the big impact of thermo-mechanical thin film properties on the pattern collapse problem.

Citation Download Citation

Wolf-Dieter Domke, Victoria L. Graffenberg, Shashikant Patel, Georgia K. Rich, Heidi B. Cao, and Paul F. Nealey "Pattern collapse in high-aspect-ratio DUV and 193-nm resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388293

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