Fabrication of isolated gates by negative-tone process and resolution enhancement technology

Ryoko Morikawa; Noboru Uchida; Minoru Watanabe; Sachiko Yabe; Satoshi Machida; Takashi Taguchi

doi:10.1117/12.388948

5 July 2000 Fabrication of isolated gates by negative-tone process and resolution enhancement technology

Ryoko Morikawa, Noboru Uchida, Minoru Watanabe, Sachiko Yabe, Satoshi Machida, Takashi Taguchi

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388948
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Interesting characteristics of a negative-tone process have been reported: enlargement of photolithographic margins of isolated line, reduction of optical proximity effect, greater dry etching selectivity. A possibility of fabrication of isolated gates of 0.13micrometers class logic device by the combination of negative-tone process and resolution enhancement technology (RET), was investigated in the KrF lithography. Photolithographic margins of 0.13micrometers isolated line were evaluated by simulation and experiment as well. Parameters are mask type, the transparency of attenuated PSM, mask-pattern size, and coherence factor. The condition defined by the optimal combination of attenuated PSM, mask-pattern size, and coherence factor. The condition defined by the optimal combination of attenuated PSM and a small coherence factor value at NA equals 0.60 increased the photolithographic margins of 0.13 micrometers isolated line. The margins evaluate under the optimal condition exceeded either of the values obtained in the negative-tone process without RET, and in positive-tone process with attenuated PSM and annular illumination. The effect of residue could be neglected in the isolate line under the optimal condition. The common window of 0.13micrometers isolate line and 0.18micrometers L/S, and that of 0.13micrometers isolated line and 0.20micrometers L/S, both increased under the optimal condition. The margins of 0.13micrometers isolated line further increased when NA was 0.68.

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Ryoko Morikawa, Noboru Uchida, Minoru Watanabe, Sachiko Yabe, Satoshi Machida, and Takashi Taguchi "Fabrication of isolated gates by negative-tone process and resolution enhancement technology", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388948

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KEYWORDS

Electroluminescence

Transparency

Resolution enhancement technologies

Photomasks

Binary data

Lithography

Dry etching

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