Influence of process variables on the microstructure and electrical properties of low-voltage ZnO varistor

Congchun Zhang; Dong-xiang Zhou; Shuping Gong

doi:10.1117/12.385530

9 May 2000 Influence of process variables on the microstructure and electrical properties of low-voltage ZnO varistor

Congchun Zhang, Dong-xiang Zhou, Shuping Gong

Proceedings Volume 4077, International Conference on Sensors and Control Techniques (ICSC 2000); (2000) https://doi.org/10.1117/12.385530
Event: International Conference on Sensors and Control Techniques (ICSC2000), 2000, Wuhan, China

Abstract

The effects of process variables, such as sintering temperature, cooling rate, calcination, balling time on the microstructure and electrical properties of the low voltage ZnO varistor have been investigated. There exists a maximum sintering temperature when the breakdown field is the lowest. The results provide information about the grain size control to fabricate low voltage ZnO varistor, as well as the relationship between the microstructure and the varistor performance. We discussed the sintering temperature dependence of breakdown field in terms of the formation rate of grain core and grain growth rate.

Citation Download Citation

Congchun Zhang, Dong-xiang Zhou, and Shuping Gong "Influence of process variables on the microstructure and electrical properties of low-voltage ZnO varistor", Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); https://doi.org/10.1117/12.385530

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