Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

RayHua Horng; DongSing Wuu; WeiChih Peng; Man-Fang Huang; PinHui Liu; Chi-Hua Seieh; KunChuan Lin

doi:10.1117/12.392180

11 July 2000 Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

RayHua Horng, DongSing Wuu, WeiChih Peng, Man-Fang Huang, PinHui Liu, Chi-Hua Seieh, KunChuan Lin

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392180
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

AlGaInP light emitting diode (LED) with a mirror substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, free-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO₂/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO₂ layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

Citation Download Citation

RayHua Horng, DongSing Wuu, WeiChih Peng, Man-Fang Huang, PinHui Liu, Chi-Hua Seieh, and KunChuan Lin "Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392180

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