Breakthrough and the future phase-change optical disk technology

Takeo Ohta

doi:10.1117/12.416851

7 February 2001 Breakthrough and the future phase-change optical disk technology

Takeo Ohta

Proceedings Volume 4085, Fifth International Symposium on Optical Storage (ISOS 2000); (2001) https://doi.org/10.1117/12.416851
Event: Fifth International Symposium on Optical Storage (IS0S 2000), 2000, Shanghai, China

Abstract

Materials such as GeTe-Sb₂Te₃-Sb chalcogenide active layer, ZnS-SiO₂ fine grain structure (<2nm) dielectric protection layer and Nitrogen doped active layer realized million overwrite cycle characteristics. Phase-change optical disk produces PD, CD-RW and high density rewritable DVD in multimedia world. Phase-change technology, large reflectivity difference signal component has the capability of multi-level recording. Dual layer like volumetric recording technology and the wide wavelength response characteristics from near infra- red 780 nm to blue 400 nm has a capability of future high density recording performance around 100 Gbit/in² and more.

Citation Download Citation

Takeo Ohta "Breakthrough and the future phase-change optical disk technology", Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); https://doi.org/10.1117/12.416851

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