Paper
29 November 2000 Tunneling-type giant magnetoresistance of Fe-SiO2 granular thin films prepared by rf magnetron sputtering
Yasushi Takemura, Keizo Watanabe, Keiichi Kakuno
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408469
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
A tunneling magnetoresistance of Fe-SiO2 granular films was studied. The samples were prepared similarly by the preparation of multilayer films using two disks of Fe and SiO2 sputtering targets. The superparamagnetic feature and tunneling magnetoresistance were observed for the samples with Fe composition rate of lower than 0.45. Small Fe granules isolated by SiO2 matrix were observed by the transmission electron microscope. The magnetoresistance curves of these samples exhibited `two step' resistivity change, which was not observed from the annealed sample. This unique feature of tunneling magnetoresistance at a low magnetic field was presumably attributed to the existence of 2D structure of granules.
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Yasushi Takemura, Keizo Watanabe, and Keiichi Kakuno "Tunneling-type giant magnetoresistance of Fe-SiO2 granular thin films prepared by rf magnetron sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408469
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KEYWORDS
Iron

Magnetism

Sputter deposition

Multilayers

Thin films

Electron microscopes

Temperature metrology

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