Pulsed laser nitridation of InP

Naoko Aoki; Toshimitsu Akane; Koji Sugioka; Koichi Toyoda; Jan J. Dubowski; Katsumi Midorikawa

doi:10.1117/12.405737

6 November 2000 Pulsed laser nitridation of InP

Naoko Aoki, Toshimitsu Akane, Koji Sugioka, Koichi Toyoda, Jan J. Dubowski, Katsumi Midorikawa

Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405737
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan

Abstract

Nitridation of semiconductor surfaces is attractive for passivation as well as fabrication of new materials. Nitridation of the III-V semiconductors has been mainly reported for GaAs. In this paper, we demonstrate the surface nitridation of InP by KrF excimer laser irradiation in an NH₃ ambient. The laser fluence was fixed at 80 mJ/cm² and number of pulses was changed from 500 to 10,000. S-ray photoelectron spectroscopy (XPS) analysis of the nitrided samples reveals that the InP surface contains both InN_x and PN_y compounds. Nitrogen content increases with the increase of number of pulses. Near- stoichiometric InN and P₃N₅ are formed by the 2500- pulse irradiation. Aging test reveals that the nitrided samples show anti-oxidation property, which is improved as the number of pulses increases.

Citation Download Citation

Naoko Aoki, Toshimitsu Akane, Koji Sugioka, Koichi Toyoda, Jan J. Dubowski, and Katsumi Midorikawa "Pulsed laser nitridation of InP", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405737

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