Paper
2 November 2000 Nondestructive film thickness measurement using atomic force microscopy at ultrasonic frequencies
Kenneth B. Crozier, Goeksenin G. Yaralioglu, F. Levent Degertekin, Jesse D. Adams, Stephen C. Minne, Calvin F. Quate
Author Affiliations +
Abstract
We present a technique in which atomic force microscopy (AFM) at ultrasonic frequencies is used to measure the contact stiffness between an AFM tip and thin films on silicon substrates. In this method, the resonance frequencies of the cantilever flexural modes are used to determine the tip-sample contact stiffness. We present experimental results, showing that the contact stiffness is highly sensitive to the thickness of thin metal and polymer films. These results are compared with those from out theoretical model, which we call the Contact Stiffness Algorithm (CSA), that may be used to calculate the contact stiffness between an AFM tip and an arbitrarily layered sample. Unlike transmission electron microscopy (TEM) or scanning electron microscopy (SEM) on a cross-section of the sample, this film thickness measurement technique is non- destructive. It is also capable of high lateral spatial resolution, provided that a sharp AFM tip is used. We present images of a photoresist film on silicon with contrast resulting from the elastic properties of the sample.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth B. Crozier, Goeksenin G. Yaralioglu, F. Levent Degertekin, Jesse D. Adams, Stephen C. Minne, and Calvin F. Quate "Nondestructive film thickness measurement using atomic force microscopy at ultrasonic frequencies", Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); https://doi.org/10.1117/12.405835
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Photoresist materials

Atomic force microscopy

Silicon films

Tungsten

Copper

Thin films

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