Paper
2 February 2001 Hole injection from indium tin oxide into triphenyl diamine
Author Affiliations +
Abstract
We have measured the electrical characteristics at the contact between Indium Tin Oxide (ITO) and N-N'-diphenyl-N- N'-bis(3-methylphenyl)-1-1-biphenyl-4,4'-diamine (TPD). By carrying out independent measurements of the hole mobility in the organic layer we are able to isolate the injection and the transport processes and study the electrical characteristics of the contact alone. We find that the contact is in fact not Ohmic, but current-limiting, despite the fact that the current has a similar electric field dependence as the space charge limited current. The contact remains current-limiting even when the hole mobility is lowered by three orders of magnitude by diluting TPD into polycarbonate. The data support a model of injection in disordered materials.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yulong Shen, Daniel B. Jacobs, and George G. Malliaras "Hole injection from indium tin oxide into triphenyl diamine", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); https://doi.org/10.1117/12.416881
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KEYWORDS
Telescopic pixel displays

Data modeling

Indium

Interfaces

Oxides

Solids

Tin

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