Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes

Emmanouil Kymakis; Gehan A. J. Amaratunga; Ioannis Alexandrou; Manish Chhowalla; William I. Milne

doi:10.1117/12.416939

5 February 2001 Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes

Emmanouil Kymakis, Gehan A. J. Amaratunga, Ioannis Alexandrou, Manish Chhowalla, William I. Milne

Proceedings Volume 4108, Organic Photovoltaics; (2001) https://doi.org/10.1117/12.416939
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10^-4 was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6% under illumination at 256 nm at an intensity of 2 (mu) W/cm².

Citation Download Citation

Emmanouil Kymakis, Gehan A. J. Amaratunga, Ioannis Alexandrou, Manish Chhowalla, and William I. Milne "Photovoltaic response in poly(3-octylthiophene)-based metal-semiconductor-metal diodes", Proc. SPIE 4108, Organic Photovoltaics, (5 February 2001); https://doi.org/10.1117/12.416939

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