Low-temperature processing for the fabrication of heavily doped CdTe gamma-ray detectors by epitaxial growth and laser annealing

Yoshinori Hatanaka; Madan Niraula; A. Nakamura; Toru Aoki; Dajii Noda; Yasuhiro Tomita

doi:10.1117/12.407585

21 November 2000 Low-temperature processing for the fabrication of heavily doped CdTe gamma-ray detectors by epitaxial growth and laser annealing

Yoshinori Hatanaka, Madan Niraula, A. Nakamura, Toru Aoki, Dajii Noda, Yasuhiro Tomita

Author Affiliations +

Proceedings Volume 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II; (2000) https://doi.org/10.1117/12.407585
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The fabrication methods and performances of CdTe radiation detectors in a p-i-n structure which helps to reduce the leakage current are reported. Two different types of doping methods were studied in order to attain heavily doped CdTe layers. One is the hydrogen plasma- radical-assisted metalorganic chemical vapor deposition (HPRA-MOCVD) and the other is the excimer laser processing, both of which are carried out at a low temperature. Using the HPRA-MOCVD, iodine doped n-type CdTe layers with carrier concentration around 10¹⁸ cm^-3 and electron mobility of 100 cm²/V-s were grown epitaxially on the GaAs substrates at a low temperature of 150 degrees Celsius. As the other method, excimer laser was irradiated on the high resistivity CdTe crystals (resistivity: 10⁹ (Omega) cm) by depositing a thin layer of dopant materials like Sb, Na₂Te, or In on the crystals surfaces. For the Sb and Na₂Te dopant, heavily doped p⁺-type thin layer was formed on the CdTe crystal, whereas In dopant exhibited n⁺-type layer. Carrier concentrations in those laser doped layers were in the order of 10¹⁹ cm^-3. These low temperature processes can be adapted for the fabrication of CdTe and CdZnTe detectors.

Citation Download Citation

Yoshinori Hatanaka, Madan Niraula, A. Nakamura, Toru Aoki, Dajii Noda, and Yasuhiro Tomita "Low-temperature processing for the fabrication of heavily doped CdTe gamma-ray detectors by epitaxial growth and laser annealing", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); https://doi.org/10.1117/12.407585

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