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18 August 2000 Increasing degree of homogeneity of electrical parameters of neutron-transmuted silicon
Shermakhmat Makhkamov, Nigmatilla A. Tursunov, Maripjon Ashurov, Zokirkhon M. Khakimov
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Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395740
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States
Abstract
In order to increase the radial homogeneity of resistivity and life-time of minority carriers of monocrystalline silicon doped by neutron-transmutation it is suggested an approach based on the accounting of geometric size of samples and conditions of post- irradiation thermal processing. The studies have shown that reduction of thickness of wafers leads to improvement of homogeneity, and that life-time of minority carries strongly depends on the cooling rate, increasing with decrease of this rate. Here the surface of silicon wafers with mechanical imperfections act as efficient gutters for recombination-active centers, where thermally stimulated diffusion of defects from the bulk to the surface plays crucial role, requiring longer thermal processing for thicker wafers.
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Shermakhmat Makhkamov, Nigmatilla A. Tursunov, Maripjon Ashurov, and Zokirkhon M. Khakimov "Increasing degree of homogeneity of electrical parameters of neutron-transmuted silicon", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395740
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KEYWORDS
Silicon
Semiconducting wafers
Diffusion
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