1.54-um erbium luminescence in silicon-germanium

Md. Quamrul Huda; Md. S. Islam

doi:10.1117/12.405368

24 October 2000 1.54-μm erbium luminescence in silicon-germanium

Md. Quamrul Huda, Md. S. Islam

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405368
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Origin of erbium luminescence in silicon-germanium at 1.54 micrometers at 1.54 micrometers has been analyzed. Erbium atoms have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. At steady state of excitation, a certain fraction of erbium sites were found to remain occupied by electrons. Trapped electrons, which eventually recombine with holes in the valence band, provide the energy for ⁴I_15/2 yields ⁴I_13/2 excitation well layers. Good agreement with experimental results on quenching of erbium luminescence has been achieved. Our model also explains the effect of higher erbium emission in silicon-germanium heterostructures when compared with bulk silicon under similar conditions.

Citation Download Citation

Md. Quamrul Huda and Md. S. Islam "1.54-μm erbium luminescence in silicon-germanium", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405368

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