Application of excimer laser annealing in the formation of ultrashallow p+/n junctions

Yung Fu Chong; Kin Leong Pey; Andrew Thye Shen Wee; Alex K. See; C. H. Tung; R. Gopalakrishnan; Yongfeng Lu

doi:10.1117/12.405380

24 October 2000 Application of excimer laser annealing in the formation of ultrashallow p⁺/n junctions

Yung Fu Chong, Kin Leong Pey, Andrew Thye Shen Wee, Alex K. See, C. H. Tung, R. Gopalakrishnan, Yongfeng Lu

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405380
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this study, we have simulated the melt front and temperature distribution profiles for pre-amorphized Si during laser irradiation. The simulation data show that theoretically, it is possible to melt the whole amorphous layer without melting the underlying crystalline substrate. On the other hand, ultra-shallow p⁺/n junctions were formed by ultra-low energy boron ion implantation into pre- amorphized silicon substrates. Dopant activation was achieved via spike rapid thermal annealing (RTA) and pulsed excimer laser annealing. Secondary ion mass spectrometry analyses show that a step-like dopant profile can be obtained with a single-pulse laser irradiation. Such a profile is in sharp contrast with the boron concentration profile that is obtained after spike RTA. The cross- sectional transmission electron microscopy images show that the entire pre-amorphized layer has been recrystallized to single-crystalline Si after laser annealing. The results clearly indicate the advantages of employing laser anneal as compared to RTA in the fabrication of highly activated and abrupt ultra-shallow junctions.

Citation Download Citation

Yung Fu Chong, Kin Leong Pey, Andrew Thye Shen Wee, Alex K. See, C. H. Tung, R. Gopalakrishnan, and Yongfeng Lu "Application of excimer laser annealing in the formation of ultrashallow p⁺/n junctions", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405380

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available