GaN-based multiple quantum well light-emitting devices

Masayoshi Koike; Sho Iwayama; Shiro Yamasaki; Yuta Tezen; Seiji Nagai; Akira Kojima

doi:10.1117/12.426840

14 May 2001 GaN-based multiple quantum well light-emitting devices

Masayoshi Koike, Sho Iwayama, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Akira Kojima

Proceedings Volume 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V; (2001) https://doi.org/10.1117/12.426840
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical- guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 300 hours with 3 mW at the wavelength of 409 nm.

Citation Download Citation

Masayoshi Koike, Sho Iwayama, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, and Akira Kojima "GaN-based multiple quantum well light-emitting devices", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426840

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