High-power AlInGaN light-emitting diodes

Jonathan J. Wierer; Jerome C. Bhat; Chien-Hua Chen; G. Christenson; Lou W. Cook; M. George Craford; Nathan F. Gardner; Werner K. Goetz; R. Scott Kern; Reena Khare; A. Kim; Michael R. Krames; Mike J. Ludowise; Richard Mann; Paul S. Martin; Mira Misra; J. O'Shea; Yu-Chen Shen; Frank M. Steranka; Steve A. Stockman; Sudhir G. Subramanya; S. L. Rudaz; Dan A. Steigerwald; Jingxi Yu

doi:10.1117/12.426841

14 May 2001 High-power AlInGaN light-emitting diodes

Jonathan J. Wierer, Jerome C. Bhat, Chien-Hua Chen, G. Christenson, Lou W. Cook, M. George Craford, Nathan F. Gardner, Werner K. Goetz, R. Scott Kern, Reena Khare, A. Kim, Michael R. Krames, Mike J. Ludowise, Richard Mann, Paul S. Martin, Mira Misra, J. O'Shea, Yu-Chen Shen, Frank M. Steranka, Steve A. Stockman, Sudhir G. Subramanya, S. L. Rudaz, Dan A. Steigerwald, Jingxi Yu

Author Affiliations +

Proceedings Volume 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V; (2001) https://doi.org/10.1117/12.426841
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

High-power light-emitting diodes (LEDs) in both the AlInGaP (red to amber) and the AlGaInN (blue-green) material systems are now commercially available. These high-power LEDs enable applications wherein high flux is necessary, opening up new markets that previously required a large number of conventional LEDs. Data are presented on high-power AlGaInN LEDs utilizing flip-chip device structures. The high-power flip-chip LED is contained in a package that provides high current and temperature operation, high reliability, and optimized radiation patterns. These LEDs produce record powers of 350 mW (1A dc, 300 K) with low (<4V) forward voltages. The performance of these LEDs is demonstrated in terms of output power, efficiency, and electrical characteristics.

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Jonathan J. Wierer, Jerome C. Bhat, Chien-Hua Chen, G. Christenson, Lou W. Cook, M. George Craford, Nathan F. Gardner, Werner K. Goetz, R. Scott Kern, Reena Khare, A. Kim, Michael R. Krames, Mike J. Ludowise, Richard Mann, Paul S. Martin, Mira Misra, J. O'Shea, Yu-Chen Shen, Frank M. Steranka, Steve A. Stockman, Sudhir G. Subramanya, S. L. Rudaz, Dan A. Steigerwald, and Jingxi Yu "High-power AlInGaN light-emitting diodes", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426841

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KEYWORDS

Light emitting diodes

Resistance

Lamps

External quantum efficiency

Absorption

Reflectivity

Sapphire

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