Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching

Claudio Marinelli; Laurence J. Sargent; Michal Bordovsky; Adrian Wonfor; Judy M. Rorison; Richard V. Penty; Ian H. White; Peter J. Heard; Ghulam Hasnain; Richard P. Schneider Jr.

doi:10.1117/12.429784

6 June 2001 Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching

Claudio Marinelli, Laurence J. Sargent, Michal Bordovsky, Adrian Wonfor, Judy M. Rorison, Richard V. Penty, Ian H. White, Peter J. Heard, Ghulam Hasnain, Richard P. Schneider Jr.

Author Affiliations +

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429784
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5(lambda) /4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5 micrometers wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4 micrometers wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14(DOT)I_Th. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

Citation Download Citation

Claudio Marinelli, Laurence J. Sargent, Michal Bordovsky, Adrian Wonfor, Judy M. Rorison, Richard V. Penty, Ian H. White, Peter J. Heard, Ghulam Hasnain, and Richard P. Schneider Jr. "Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429784

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