High-quality GaInNAs active layers for 1.3-um lasers

Takeshi Kitatani; Masahiko Kondow; Toshiaki Tanaka

doi:10.1117/12.429796

6 June 2001 High-quality GaInNAs active layers for 1.3-μm lasers

Takeshi Kitatani, Masahiko Kondow, Toshiaki Tanaka

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429796
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Since we first proposed the use of GaInNAs active layers to improve the high-temperature performance of long wavelength lasers in 1995, this material has been intensively investigated by many research groups and several promising results have been reported. We have used gas-source molecular beam epitaxy with N-radicals as a N-source for GaInNAs growth, and improved the crystal quality by optimizing the growth condition. Our growth method has the advantages of relative low temperature growth and a high N- radical sticking coefficient compared to metal organic chemical vapor deposition with Dimethylhydrazine. The effects of thermal annealing on the optical properties of GaInNAs layers have also been investigated. In-situ thermal annealing at temperatures above 550 degree(s)C was found to greatly enhance the photoluminescence intensity of GaInNAs. By optimizing both the crystal growth and thermal annealing conditions, we made a 1.3-micrometers GaInNAs/GaAs single-quantum- well laser that has a high characteristic temperature over 200 K and offers life time over 1000 hours. Therefore, we expect GaInNAs lasers to be put into practical use in the near future.

Citation Download Citation

Takeshi Kitatani, Masahiko Kondow, and Toshiaki Tanaka "High-quality GaInNAs active layers for 1.3-μm lasers", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429796

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