Paper
12 June 2001 Silicon infrared focal plane arrays
Masafumi Kimata, Hirofumi Yagi, Masashi Ueno, Junji Nakanishi, Tomohiro Ishikawa, Yoshiyuki Nakaki, Makoto Kawai, Kazuyo Endo, Yasuhiro Kosasayama, Yasuaki Ohota, Takashi Sugino, Takanori Sone
Author Affiliations +
Abstract
Using Si VLSI technology, we can fabricate various kinds of infrared focal plane arrays (FPAs) which cover spectral bands from short wavelength infrared to long wavelength infrared. The Si-based technology offers many attractive features, such as monolithic integration, high uniformity, low noise, low cost, and high productivity. We have been developing Si-based infrared FPAs for more than 20 years and have verified their usefulness.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Kimata, Hirofumi Yagi, Masashi Ueno, Junji Nakanishi, Tomohiro Ishikawa, Yoshiyuki Nakaki, Makoto Kawai, Kazuyo Endo, Yasuhiro Kosasayama, Yasuaki Ohota, Takashi Sugino, and Takanori Sone "Silicon infrared focal plane arrays", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429416
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Staring arrays

Thermography

Infrared radiation

Diodes

Silicon

Long wavelength infrared

Heterojunctions

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