Low-temperature polysilicon technology for active matrix addressing of LCDs and OLEDs

Didier Pribat; Francois Plais

doi:10.1117/12.424857

30 April 2001 Low-temperature polysilicon technology for active matrix addressing of LCDs and OLEDs

Didier Pribat, Francois Plais

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424857
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

Although it has been developed for more than a decade, low temperature polysilicon technology is far from being as mature as its amorphous silicon counterpart. This is due to much more complex processes, that are not used at all in related industrial areas, such as the microelectronics industry. In this paper, we first present the major critical process steps of the low temperature polysilicon technology, including laser crystallization and MOS-type oxide deposition. In a second part, we show that if high information content displays are to be fabricated with organic light emitting materials, they will certainly use a polysilicon active matrix, because of the inherent stability of this material.

Citation Download Citation

Didier Pribat and Francois Plais "Low-temperature polysilicon technology for active matrix addressing of LCDs and OLEDs", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424857

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