Paper
20 August 2001 Extremely fine-pitch printing with a 10X Schwarzschild optic at extreme-ultraviolet wavelengths
Michael D. Shumway, Sang Hun Lee, Chang Hyun Cho, Patrick P. Naulleau, Kenneth A. Goldberg, Jeffrey Bokor
Author Affiliations +
Abstract
We demonstrate the use of a 13.4-nm wavelength, 10x-demagnification Schwarzschild optical system to expose high-resolution test patterns, extending well beyond the conventional resolution limit to dense feature sizes of 50 nm and below. We have successfully used a spatial frequency doubling technique to print equal line and space patterns with line widths as small as 30 nm. Simulations show that by using the fully extended numerical aperture, the system may achieve line widths as small as 12 nm. This configuration shows great potential for use in evaluating the ultimate performance and extendibility of resist materials for EUV lithography.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael D. Shumway, Sang Hun Lee, Chang Hyun Cho, Patrick P. Naulleau, Kenneth A. Goldberg, and Jeffrey Bokor "Extremely fine-pitch printing with a 10X Schwarzschild optic at extreme-ultraviolet wavelengths", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436690
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Cited by 7 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Polymethylmethacrylate

Semiconducting wafers

Mirrors

Printing

Spatial frequencies

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