Paper
24 August 2001 Modeling the impact of thermal history during post-exposure bake on the lithographic performance of chemically amplified resists
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Abstract
In this study, the influence of the thermal history during post exposure bake (PEB) on the lithographic performance of a chemically amplified resist is examined using a reaction-diffusion model of the resist combined with an arbitrary time-temperature profile. The temperature profiles investigated in this study are either based on a simple heat transfer model or arbitrary time-temperature data. The heat transfer model allows variation of the rise time to the bake temperature, of the cooling process during transfer to the chill plate, and of the fall time to the chill plate temperature. Calculations of the dose-to-size for dense features and the iso-dense bias are presented for typical temperature profiles, and these results are contrasted with the lithographic responses for an ideal bake. Also, the lithographic response for a double bake is presented. For certain resist model parameters, the lithographic response for a higher temperature bake followed by a lower temperature bake can be significantly different from the response when the lower temperature bake precedes the higher temperature bake.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark D. Smith, Chris A. Mack, and John S. Petersen "Modeling the impact of thermal history during post-exposure bake on the lithographic performance of chemically amplified resists", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436826
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Cited by 26 scholarly publications and 3 patents.
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KEYWORDS
Semiconducting wafers

Lithography

Thermal modeling

Chemically amplified resists

Diffusion

Data modeling

Performance modeling

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