Paper
12 April 2001 Physical mechanisms of femtosecond-pulse-induced damage in dielectric thin films
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Abstract
Laser induced breakdown of a high-quality mirror consisting of alternating (lambda) /4 layers of Ta2O5 and SiO2 and a single 500-nm thin film of Ta2O5 were studied with amplified and unamplified femtosecond pulses. The experimental data can be fitted with a model taking into account multiphoton absorption, impact ionization, and local intensity enhancements due to interference effects in the films. The results indicate that state of the art, high- quality thin films show a damage behavior that is similar to bulk materials. Defects and impurities play a negligible role. Incubation effects are found to reduce the damage threshold when the coatings are damaged with multiple pulses from a femtosecond oscillator. Time-resolved pump-probe reflection and transmission experiments indicate a decay of the excited electron plasma with characteristic time constants of 4 ps, 60 ps, and 700 ps.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jayesh C. Jasapara, Vasudevan A. V. Nampoothiri, Wolfgang G. Rudolph, Detlev Ristau, and Kai Starke "Physical mechanisms of femtosecond-pulse-induced damage in dielectric thin films", Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); https://doi.org/10.1117/12.425032
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KEYWORDS
Ionization

Absorption

Mirrors

Picosecond phenomena

Dielectrics

Thin films

Femtosecond phenomena

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