Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction

Chris A. Mack

doi:10.1117/12.438354

5 September 2001 Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction

Chris A. Mack

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438354
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

GHOST uses two exposures, the primary dose and its complement, in an attempt to equalize the effects of backscattering and reduce proximity effects. Unfortunately, image contrast is reduced compared to exposures done without GHOST. A simplified raster scan theory is developed in order to examine the effects of backscattering and GHOST proximity correction on the quality of the images produced. Electron beam lithography simulation is used to examine the effect of spot size and voltage on the spot image generated in 400 nm of ZEP 7000 resist, and the effects of GHOST on proximity effects and process latitude.

Citation Download Citation

Chris A. Mack "Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438354

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