Reticle quality needs for advanced 193-nm lithography

Rik M. Jonckheere; Geert Vandenberghe; Vincent Wiaux; Staf Verhaegen; Kurt G. Ronse

doi:10.1117/12.438345

5 September 2001 Reticle quality needs for advanced 193-nm lithography

Rik M. Jonckheere, Geert Vandenberghe, Vincent Wiaux, Staf Verhaegen, Kurt G. Ronse

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438345
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

An overview will be given of the increasing reticle quality needs, based on the 193nm lithography program ongoing at IMEC, with special focus on the 100nm node. When benchmarked against high NA 248nm, 193nm offers an advantage for the 130nm node, as less aggressive resolution enhancements are required. For decreasing k1-factor, there is also a need to cope with an increasing mask error factor. The CD uniformity needs to be tightened. Likely, it is required to keep proximity effects and linearity issues on reticles under control. Extending from linewidth control to pattern fidelity, new metrology concepts are being suggested, which will allow to come-up with a quantitative result. Especially for the implementation of aggressive OPC there is a need to consider the mask quality in many more aspects then just those typically taken into account so far. This will allow an assessment of the printing performance of real reticles, taking limitations of the achieved pattern fidelity caused by the mask making process into account.

Citation Download Citation

Rik M. Jonckheere, Geert Vandenberghe, Vincent Wiaux, Staf Verhaegen, and Kurt G. Ronse "Reticle quality needs for advanced 193-nm lithography", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438345

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