Coupled In0.6Ga0.4As/GaAs quantum dots: a photoreflectance study

G. Sek; K. Ryczko; Jan Misiewicz; M. Bayer; Frank Klopf; Johann-Peter Reithmaier; Alfred W. B. Forchel

doi:10.1117/12.425417

17 April 2001 Coupled In _0.6Ga_0.4As/GaAs quantum dots: a photoreflectance study

G. Sek, K. Ryczko, Jan Misiewicz, M. Bayer, Frank Klopf, Johann-Peter Reithmaier, Alfred W. B. Forchel

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425417
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

MBE-grown In (formula available in paper)As/GaAs double quantum dot structure has been investigated by photo reflectance (PR) spectroscopy. Features related to all the relevant portions of the sample including the quantum dots and wetting layers have been observed at 10 K. The PR results have been supported by the standard high-excitation photo luminescence (PL) measurements revealing excited state transition due to the effect of higher level filling. The experimental transition energies have been compared to the results of the effective mass approximation calculations for double quantum wells and lens-shaped double quantum dots. The evidence of the dot-dot and wetting layer well-well interaction has been found.

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G. Sek, K. Ryczko, Jan Misiewicz, M. Bayer, Frank Klopf, Johann-Peter Reithmaier, and Alfred W. B. Forchel "Coupled In _0.6Ga_0.4As/GaAs quantum dots: a photoreflectance study", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425417

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