Development of electrochromic devices of tungsten oxide thin film integrated with p-i-n photodetector

Jyh-Jier Ho; Yuen Keun Fang; Chin-Ying Chen; Kuen-Hsien Lee; Min-Feng Lai

doi:10.1117/12.427077

8 May 2001 Development of electrochromic devices of tungsten oxide thin film integrated with p-i-n photodetector

Jyh-Jier Ho, Yuen Keun Fang, Chin-Ying Chen, Kuen-Hsien Lee, Min-Feng Lai

Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427077
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan

Abstract

In this paper, a new electro-chromic device (ECD) is developed by tungsten oxide (WO₃) thin film integrated with a-Si_1-xGe_x:H pin photodetector. With the addition of the palladium (Pd) film to ionize hydrogen gas, the WO₃ thin film will react with hydrogen ion and transfer from transparency to blue color. This color change will degrade the absorption of light with wavelength larger than blue color. First, we determine the most suitable condition (by increasing the partial oxygen pressure) to produce a-WO_x films, thus offering a good electro- chromic performance for opto-switching applications. Then, the photo current generated by a-Si_1-xGe_x:H pin photodetector will be lowered down, thus detecting the existing of hydrogen gas. Especially, the WO₃-pin hydrogen sensor also shows highly selectivity with hydrogen gas to separate from CO and C₂H₅OH gases.

Citation Download Citation

Jyh-Jier Ho, Yuen Keun Fang, Chin-Ying Chen, Kuen-Hsien Lee, and Min-Feng Lai "Development of electrochromic devices of tungsten oxide thin film integrated with p-i-n photodetector", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427077

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KEYWORDS

Hydrogen

Thin films

Sensors

Glasses

Ions

Oxides

Palladium

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