Growth, structure, and properties of oxide luminophor thin films obtained by pulsed laser technology

Yaroslav V. Bobitski; Bohdan K. Kotlyarchuk; Dmytro I. Popovych; Victor K. Savchuk

doi:10.1117/12.429748

12 June 2001 Growth, structure, and properties of oxide luminophor thin films obtained by pulsed laser technology

Yaroslav V. Bobitski, Bohdan K. Kotlyarchuk, Dmytro I. Popovych, Victor K. Savchuk

Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429748
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine

Abstract

In order to form flat-panel displays with a high resolution property, the phosphor layer should possess considerable electrical conductivity and thermal stability. Thin phosphor films of zinc silicates, rare earth galats and/or multilayer system on their ground are known to satisfy these very requirements. The authors choose the following compounds of ZnSiO₄:Ti, ZnSiO₄:Mn, Zn_0.4Gd_1.6O₃:Eu, KGa₅O₈:Mn with the corresponding color gamma luminescence as the targets for laser pulse deposition based on the above mentioned reasons. The main results on the research physical-technological conditions of the thin phosphor compound film synthesis of the of ZnSiO₄:Ti, ZnSiO₄:Mn, Zn_0.4Gd_1.6O₃:Eu, KGa₅O₈:Mn obtained by means of the reactive laser pulse evaporating with the help of quasi-closed reactive ambience are given in this work.

Citation Download Citation

Yaroslav V. Bobitski, Bohdan K. Kotlyarchuk, Dmytro I. Popovych, and Victor K. Savchuk "Growth, structure, and properties of oxide luminophor thin films obtained by pulsed laser technology", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429748

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