Ultra-thin silicon (UTSi(R)) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

Liping Zhang; Alexander A. Sawchuk

doi:10.1117/12.451150

26 December 2001 Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

Liping Zhang, Alexander A. Sawchuk

Author Affiliations +

Proceedings Volume 4435, Wave Optics and VLSI Photonic Devices for Information Processing; (2001) https://doi.org/10.1117/12.451150
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Citation Download Citation

Liping Zhang and Alexander A. Sawchuk "Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration", Proc. SPIE 4435, Wave Optics and VLSI Photonic Devices for Information Processing, (26 December 2001); https://doi.org/10.1117/12.451150

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