White light-emitting diodes with phase-separated InGaN active layers

Yong-Tae Moon; Dong-Joon Kim; Jin-Sub Park; Jeong-Tak Oh; Nae-Man Park; Tae-Soo Kim; Seong-Ju Park

doi:10.1117/12.450028

5 December 2001 White light-emitting diodes with phase-separated InGaN active layers

Yong-Tae Moon, Dong-Joon Kim, Jin-Sub Park, Jeong-Tak Oh, Nae-Man Park, Tae-Soo Kim, Seong-Ju Park

Proceedings Volume 4445, Solid State Lighting and Displays; (2001) https://doi.org/10.1117/12.450028
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

We fabricated the white light-emitting diodes without phosphor materials using phase-separated InGaN active layers. The white luminescence was attributed to the broad distributions of indium composition and size of quantum dot- like In-rich regions in the phase-separated InGaN Ternary alloys.

Citation Download Citation

Yong-Tae Moon, Dong-Joon Kim, Jin-Sub Park, Jeong-Tak Oh, Nae-Man Park, Tae-Soo Kim, and Seong-Ju Park "White light-emitting diodes with phase-separated InGaN active layers", Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); https://doi.org/10.1117/12.450028

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