Photocarrier extraction effect in thin variable-gap photoresistors

Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky; Roman M. Kovtun

doi:10.1117/12.448185

12 November 2001 Photocarrier extraction effect in thin variable-gap photoresistors

Bogdan S. Sokolovsky, Volodymyr K. Pysarevsky, Roman M. Kovtun

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448185
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The paper theoretically examines the photocarrier extraction effect taking place in thin variable-gap photoresistors with linear profile of energy gap and Ohmic contacts. monochromatic light. Taking into account quasielectric built-in fields occurring in variable-gap semiconductors, it has been deduced analytical expressions for spatial dependencies of photocarriers, as well as for photocurrent in thin variable-gap photoresistors. When the applied external field has the direction opposite to quasi-electric one, the latter promotes pulling the carriers towards the Ohmic contact where they recombine with an infinite rate what leads to decrease in the carrier effective lifetime. In the case of opposite direction of external field the quasielectric field counteracts moving the photocarriers forward the Ohmic contact what gives rise to the increase in carrier effective lifetime. In these conditions the negative differential photoconductivity can arise with the magnitude of maximum photoconductivity considerably exceeding that of uniform semiconductor layers.

Citation Download Citation

Bogdan S. Sokolovsky, Volodymyr K. Pysarevsky, and Roman M. Kovtun "Photocarrier extraction effect in thin variable-gap photoresistors", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448185

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