Silicon Based Schottky Barrier Infrared Sensors For Power System And Industrial Applications

Hammam Elabd; Walter F Kosonocky

doi:10.1117/12.939165

27 March 1984 Silicon Based Schottky Barrier Infrared Sensors For Power System And Industrial Applications

Hammam Elabd, Walter F Kosonocky

Proceedings Volume 0446, Thermosense VI: Thermal Infrared Sensing for Diagnostics and Control; (1984) https://doi.org/10.1117/12.939165
Event: Thermal Infrared Sensing for Diagnostics and Control: Thermosense VI, 1983, Oak Brook, United States

Abstract

Schottky barrier infrared charge coupled device sensors (IR-CCDs) have been developed. PtSi Schottky barrier detectors require cooling to liquid Nitrogen temperature and cover the wavelength range between 1 and 6 μm. The PtSi IR-CCDs can be used in industrial thermography with NEAT below 0.1°C. Pd Si-Schottkybarrier detectors require cooling to 145K and cover the spectral range between 1 and 3.5 μm. 11d2Si-IR-CCDs can be used in imaging high temperature scenes with NE▵T around 100°C. Several high density staring area and line imagers are available. Both interlaced and noninterlaced area imagers can be operated with variable and TV compatible frame rates as well as various field of view angles. The advantages of silicon fabrication technology in terms of cost and high density structures opens the doors for the design of special purpose thermal camera systems for a number of power aystem and industrial applications.

Citation Download Citation

Hammam Elabd and Walter F Kosonocky "Silicon Based Schottky Barrier Infrared Sensors For Power System And Industrial Applications", Proc. SPIE 0446, Thermosense VI: Thermal Infrared Sensing for Diagnostics and Control, (27 March 1984); https://doi.org/10.1117/12.939165

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