Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

Iwona Wegrzecka; Maria Grynglas; Maciej Wegrzecki

doi:10.1117/12.435921

8 August 2001 Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

Iwona Wegrzecka, Maria Grynglas, Maciej Wegrzecki

Proceedings Volume 4516, Optoelectronic and Electronic Sensors IV; (2001) https://doi.org/10.1117/12.435921
Event: Optoelectronic and Electronic Sensors IV, 2000, Gliwice, Poland

Abstract

New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

Citation Download Citation

Iwona Wegrzecka, Maria Grynglas, and Maciej Wegrzecki "Spectral dependence of the main parameters of ITE silicon avalanche photodiodes", Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); https://doi.org/10.1117/12.435921

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