Paper
19 October 2001 1.3μm GaInNAs/GaAs multiple quantum wells resonant-cavity-enhanced photodetectors
Wei Zhang, Zhong Pan, Lianhe Li, Ruikang Zhang, Yaowang Lin, Rong Han Wu
Author Affiliations +
Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444967
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 μm with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-μm diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Zhang, Zhong Pan, Lianhe Li, Ruikang Zhang, Yaowang Lin, and Rong Han Wu "1.3μm GaInNAs/GaAs multiple quantum wells resonant-cavity-enhanced photodetectors", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444967
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KEYWORDS
Photodetectors

Absorption

Quantum efficiency

Quantum wells

Gallium arsenide

Excitons

Reflectivity

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