Design of the rf-MEMS voltage-tunable capacitor for wide tunable range

Yongduk Kim; Sekwang Park

doi:10.1117/12.448861

19 November 2001 Design of the rf-MEMS voltage-tunable capacitor for wide tunable range

Yongduk Kim, Sekwang Park

Proceedings Volume 4593, Design, Characterization, and Packaging for MEMS and Microelectronics II; (2001) https://doi.org/10.1117/12.448861
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

In this paper, we have proposed and designed the new structure of a RF-MEMS voltage tunable capacitor, which have two-movable parallel plates using electrostatic method and can be fabricated by the MEMS technology. Capacitance of the designed voltage tunable capacitor has from 1.0pF to 1.48pF as the applied bias voltage from 0.5V to 2.48V. And the results of the simulation data for designed tunable capacitor are shown by the graph. The effective area and the distance of the capacitor plates are 335x335micrometers ² and 1micrometers for 1pF.

Citation Download Citation

Yongduk Kim and Sekwang Park "Design of the rf-MEMS voltage-tunable capacitor for wide tunable range", Proc. SPIE 4593, Design, Characterization, and Packaging for MEMS and Microelectronics II, (19 November 2001); https://doi.org/10.1117/12.448861

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