Extremely short external-cavity lasers: direct semiconductor laser readout modeling by using finite difference time domain calculations

Janne K. Aikio; Kari J. Kataja; Dennis G. Howe

doi:10.1117/12.446606

29 October 2001 Extremely short external-cavity lasers: direct semiconductor laser readout modeling by using finite difference time domain calculations

Janne K. Aikio, Kari J. Kataja, Dennis G. Howe

Author Affiliations +

Proceedings Volume 4595, Photonic Systems and Applications; (2001) https://doi.org/10.1117/12.446606
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

In this paper we describe how finite difference time domain (FDTD) calculations can be used in the modeling of extremely short external cavity (ESEC) lasers. We concentrate on the applications of ESEC lasers in modern optical data storage systems: we study the operation of direct semiconductor laser read/write heads that utilize either a conventional edge emitting laser or very small aperture laser. The storage medium is assumed to be a first-surface-recorded phase change (e.g. SGT) disc. The external cavity is formed between laser's front facet and disc. The length of the ESEC is typically 0.1 to 1.0 microns. By using FDTD we can study the behavior of the electric field in the ESEC in detail, taking into account the vector field effects resulting from the three-dimensional nature of the data marks and laser apertures. We calculate the distributions of electric field amplitudes, power flow and absorption in/near the external cavity. In addition, we calculate the effective reflectance spectrum of the ESEC and use this data as input into a phenomenological laser model to simulate the readout signal (i.e. laser's output power and/or wavelength) as the disk is scanned. One-dimensional FDTD models were used for qualitative analysis of ESEC laser's wavelength and power characteristics.

Citation Download Citation

Janne K. Aikio, Kari J. Kataja, and Dennis G. Howe "Extremely short external-cavity lasers: direct semiconductor laser readout modeling by using finite difference time domain calculations", Proc. SPIE 4595, Photonic Systems and Applications, (29 October 2001); https://doi.org/10.1117/12.446606

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available