Paper
16 October 2001 Pulsed laser deposition of crystalline carbon nitride thin films at high substrate temperature
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445729
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Crystalline carbon nitride thin films are synthesized by pulsed XeCl excimer laser deposition technique following by a high temperature annealing or accompanying a pulsed glow discharge plasma assistance. The composition, the structure and the binding state of the deposited films are analyzed by several techniques such as Scanning electron microscopy, Energy-disperse X-ray (EDX), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Experiment results show that the crystalline carbon nitride films preferentially formed at high temperature companying with the nitrogen content reduction and the films graphitization, combining high substrate temperature and nitrogen activation through pulsed discharge is favorable for the formation of (alpha) -C3N4 crystallites.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guangsheng Fu, Wei Yu, Shu-Fang Wang, Lianshui Zhang, and Xiao-Wei Li "Pulsed laser deposition of crystalline carbon nitride thin films at high substrate temperature", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445729
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