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This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using x-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.
P J Grunthaner andF J. Grunthaner
"Electronic And Chemical Structure Of Metal-Silicon Interfaces", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941343
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P J Grunthaner, F J. Grunthaner, "Electronic And Chemical Structure Of Metal-Silicon Interfaces," Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941343