Low Temperature Native Oxide Reduction From GaAs Surfaces

W. E. Stanchina; J. M. Whelan; K. Chalermtiragool

doi:10.1117/12.941351

31 May 1984 Low Temperature Native Oxide Reduction From GaAs Surfaces

W. E. Stanchina, J. M. Whelan, K. Chalermtiragool

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941351
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The objectives of this paper are three-fold: (1) to describe the necessary conditions for low temperature (i.e. < 500°C) reduction of native oxides from GaAs surfaces; (2) to describe a technique and procedure for establishing those conditions in H2 and possibly N2 gas; and (3) to present results of GaAs native oxide reduction including reduction rates and factors which affect them. Thermodynamic calculations of the necessary ^PH₂0/^PH₂ ratios (equivalent to ^P0₂) for oxide reduction from GaAs are presented. These same conditions would be sufficient to remove native oxides from GaInAs and from Ge. Experimental data will show that these atmospheres can be controlled and measured in flowing H₂ and N₂ through the use of calcia-stabilized zirconia solid electrolytic cells. H₂ atmospheres have been obtained with less than 20 parts per billion of water vapor, low enough to reduce oxides of GaAs at temperatures as low as 270°C. Reduction rates have been determined for an anodic oxide on GaAs indicating that the rate as a function of temperature was proportional to exp(-26600/RT); and it was also directly proportional to the logarithm of the average oxide thickness.

Citation Download Citation

W. E. Stanchina, J. M. Whelan, and K. Chalermtiragool "Low Temperature Native Oxide Reduction From GaAs Surfaces", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941351

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