Magnetic-field enhancement of terahertz emission from semiconductor surfaces: a comparison of experiment with semiclassical model

Jie Shan; Carsten Weiss; Richard E. Wallenstein; Rene Beigang; Tony F. Heinz

doi:10.1117/12.470407

11 June 2002 Magnetic-field enhancement of terahertz emission from semiconductor surfaces: a comparison of experiment with semiclassical model

Jie Shan, Carsten Weiss, Richard E. Wallenstein, Rene Beigang, Tony F. Heinz

Author Affiliations +

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470407
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The possibility of strong enhancement of terahertz (THz) emission from photogenerated carriers in the surface depletion region of a semiconductor under the influence of external magnetic field has been well documented in the literature. We describe a simple theory to explain the key features of this phenomenon. The model is based on a combination of the Drude-Lorentz approximation for the carrier dynamics with an appropriate solution of the radiation problem. The magnetic-field enhancement of THz emission arises primarily form the increased radiation efficiency of transient currents flowing in the plane of the surface. The model provides quantitative agreement with experiment for the pronounced angular dependence of the enhancement and predicts the correct trend for degree of enhancement in a variety of semiconductors.

Citation Download Citation

Jie Shan, Carsten Weiss, Richard E. Wallenstein, Rene Beigang, and Tony F. Heinz "Magnetic-field enhancement of terahertz emission from semiconductor surfaces: a comparison of experiment with semiclassical model", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470407

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