Paper
11 June 2002 Optical pump-terahertz probe investigation of carrier relaxation in radiation-damaged silicon-on-sapphire
Frank A. Hegmann, Kristine P.H. Lui
Author Affiliations +
Abstract
We use an optical pump - terahertz probe technique to study relaxation dynamics of photoexcited carriers in semiconductors. The optical pump pulse (400/800 nm, 100 fs) from an amplified Ti:sapphire laser generates free carriers within the optical penetration depth of the semiconductor surface, and the transmission of the terahertz (THz) probe pulse is monitored as a function of delay time between pump and probe. In particular, we investigate carrier relaxation dynamics in radiation-damaged silicon-on-sapphire (RD-SOS). We measure pump-induced changes in the transmission of the amplitude of the THz pulse, which proves to be a valid technique for these low-mobility samples due to negligible phase shifts in the transmitted THz pulse. Using a simple thin-film Drude model, single-exponential relaxation times of 4 to 6 ps are observed and transient mobilities of about 420 cm2/Vs are obtained for moderately damaged RD-SOS> Picosecond carrier relaxation dynamics in high-implant-dose RD-SOS and sub-picosecond transients in amorphous silicon thin films are also observed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank A. Hegmann and Kristine P.H. Lui "Optical pump-terahertz probe investigation of carrier relaxation in radiation-damaged silicon-on-sapphire", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470433
Lens.org Logo
CITATIONS
Cited by 15 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Picosecond phenomena

Terahertz radiation

Silicon

Amorphous silicon

Thin films

Semiconductors

Crystals

Back to Top